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Next generation memories such as FeRAM (Ferroelectric Random Access Memory), ReRAM (Resistance Random Access Memory) and MRAM (Magnetoresistive Random Access Memory) require etching of novel non-volatile materials.
However, by-product adhesion inside of etch chamber causes significant productivity loss in volume production.
EMCP (Electro Magnetically Coupled Plasma) offers an outstanding solution to this problem ensuring constant high performance even for non-volatile material etch.
|Applicable wafer diameter||200mm, 300mm|
|System configuration||2 etch+ 2 ash (max.)|